规格：功耗 Pd 2.4W,
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.6 A, -20 V, 0.036 ohm, -700 mV, -700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.7 A, 20 V, 16.8 mohm, 4.5 V, 830 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 5A, MicroFET, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 27 mohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 27 mohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.8 A, -30 V, 0.03 ohm, 25 V, -2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -9.4 A, -20 V, 0.016 ohm, -4.5 V, -500 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 15.5 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.037 ohm, 4.5 V, 800 mV
(EN)
