规格：功耗 Pd 250mW,
VISHAY
晶体管, MOSFET, P沟道, 140 mA, -20 V, 20 ohm, -4.5 V, -1.2 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV
(EN)
BROADCOM LIMITED
晶体管, 射频FET, 5 V, 50 mA, 250 mW, 500 MHz, 26.5 GHz, 0402 [公制 1005]
(EN)BROADCOM LIMITED
晶体管, 射频FET, 5 V, 50 mA, 250 mW, 500 MHz, 26.5 GHz, 0402 [公制 1005]
(EN)
ON SEMICONDUCTOR
静电保护装置, 双向, 7.2 V, X3DFN, 2 引脚, 250 mW
(EN)
ON SEMICONDUCTOR
静电保护装置, 35 V, X3DFN, 2 引脚, 18.5 V, 250 mW
(EN)
NEXPERIA
静电保护装置, TVS, 20 V, SOT-23, 3 引脚, 250 mW
(EN)
NEXPERIA
静电保护装置, 15 V, SOT-883, 3 引脚, 5 V, 250 mW
(EN)NEXPERIA
静电保护装置, TVS, 20 V, SOT-23, 3 引脚, 250 mW
(EN)
