规格：功耗 Pd 265mW,
ON SEMICONDUCTOR
单晶体管 双极, NPN, 160 V, 265 mW, 60 mA, 30 hFE
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -65 V, 100 MHz, 265 mW, -100 mA, 220 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 250 MHz, 265 mW, 600 mA, 20 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 265 mW, 100 mA, 200 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 300 MHz, 265 mW, 600 mA, 35 hFE
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
双路场效应管, MOSFET, 双P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 265 mW, 100 mA, 200 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 265 mW, 100 mA, 290 hFE
(EN)
