规格：功耗 Pd 290mW,
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 290 mW, -200 mA, 30 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.2 A, -30 V, 0.09 ohm, -10 V, -1.15 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.175 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.4 A, -8 V, 100 mohm, -4.5 V, -700 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)
INFINEON
MOSFET, N-CH, 75V, 183A, TO-220AB-3
(EN)
NXP
晶体管, BISS, 双路 PNP, -60V, -1A
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 1.3A, SC-70, 整卷
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.4 A, -8 V, 100 mohm, -4.5 V, -700 mV
(EN)
NXP
晶体管, BISS型, 双路 NPN, 60V, 1A, 6-SOT-457
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 100 V, 290 mW, 1 A, 150 hFE
(EN)VISHAY
晶体管, MOSFET, P沟道, -670 mA, -20 V, 0.36 ohm, -4.5 V, -1.4 V
(EN)
NEXPERIA
静电保护装置, TVS, 8.7 V, TO-236AB, 3 引脚, 900 mV, 290 mW
(EN)NEXPERIA
静电保护装置, TVS, 9.6 V, TO-236AB, 3 引脚, 900 mV, 290 mW
(EN)NEXPERIA
静电保护装置, TVS, 8 V, TO-236AB, 3 引脚, 900 mV, 290 mW
(EN)
