INTERNATIONAL RECTIFIER

场效应管, MOSFET, 双P沟道, 2W, 8-SOIC

NEXPERIA

双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V

DIODES INC.

晶体管, MOSFET, N沟道, 1 A, 60 V, 1.5 ohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, NPN, 180 V, 70 MHz, 2 W, 500 mA, 500 hFE

INFINEON

双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 50 mohm, 10 V, 1 V

DIODES INC.

单晶体管 双极, PNP, -40 V, 100 MHz, 2 W, -2 A, 150 hFE

INFINEON

双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV

INFINEON

双路场效应管, MOSFET, 双N沟道, 5.2 A, 20 V, 0.05 ohm, 4.5 V, 700 mV

INTERNATIONAL RECTIFIER

场效应管, MOSFET, 双N沟道, 2W, 8-SOIC

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET

DIODES INC.

晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V

INFINEON

双路场效应管, MOSFET, 双路N和P通道, 6.8 A, 30 V, 0.022 ohm, 10 V, 1.8 V

VISHAY

场效应管, MOSFET, N沟道

NEXPERIA

单晶体管 双极, 双NPN, 30 V, 165 MHz, 2 W, 1 A, 180 hFE

VISHAY

晶体管, P沟道

ON SEMICONDUCTOR

晶体管, NPN, 3A, 40V, 2W, SOT-223

NEXPERIA

单晶体管 双极, NPN, 30 V, 130 MHz, 2 W, 5.5 A, 250 hFE

DIODES INC.

单晶体管 双极, NPN, 400 V, 50 MHz, 2 W, 300 mA, 100 hFE

DIODES INC.

单晶体管 双极, NPN, 25 V, 240 MHz, 2 W, 3 A, 200 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 80 V, 50 MHz, 2 W, 10 A, 40 hFE

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE

INFINEON

双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV

DIODES INC.

单晶体管 双极, 达林顿, NPN, 30 V, 170 MHz, 2 W, 1 A, 20000 hFE

STMICROELECTRONICS

单晶体管 双极, 达林顿, PNP, 100 V, 2 W, 8 A, 1000 hFE