规格：功耗 Pd 300W,
INFINEON
晶体管, MOSFET, N沟道, 61 A, 250 V, 0.019 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 88 A, 200 V, 0.0099 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 100 V, 6.7 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 279 A, 60 V, 0.0016 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0016 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0018 ohm, 10 V, 3.1 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 2 MHz, 300 W, -50 A, 2 hFE
(EN)
STMICROELECTRONICS
场效应管, MOSFET
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 5 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 200 V, 0.054 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0023 ohm, 10 V, 2.7 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 300 W, 1 mA, 100 hFE
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 0.04 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V
(EN)
