规格：功耗 Pd 300W,
NTE ELECTRONICS
达林顿晶体管, PNP, -120V, TO-3
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0095 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 6.5 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
达林顿双极晶体管
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0033 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 3.5 mohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 55V, 75A, D2-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1800 μohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 电源单元和太阳能应用, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 75 V, 3.8 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, 120 V, 300 W, 50 A, 400 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 44 A, 300 V, 0.036 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.002 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0043 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0021 ohm, 10 V, 3.1 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 40 A, 3.2 V, 300 W, 1.2 kV, TO-247AD, 3 引脚
(EN)NTE ELECTRONICS
晶体管, PNP, 80V, 50A, TO-204AA-2
(EN)
