规格：功耗 Pd 190W,
INFINEON
晶体管, MOSFET, N沟道, 72 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.68 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 60 A, 1.45 V, 190 W, 600 V, Module
(EN)
IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 90 A, 2.2 V, 190 W, 1.2 kV, Y4-M5
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 270 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10.5 A, 800 V, 750 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 14 A, 600 V, 0.38 ohm, 10 V, 3.75 V
(EN)
