规格：功耗 Pd 19W,
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0135 ohm, -4.5 V, -500 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.18 ohm, 10 V, 2.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.015 ohm, -4.5 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 20 A, 60 V, 0.019 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 2.6 A, 200 V, 1.08 ohm, 4.5 V, 1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -12 V, 0.011 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV
(EN)
