规格：功耗 Pd 230W,
INFINEON
晶体管, MOSFET, N沟道, 160 A, 60 V, 4.2 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 200 A, 40 V, 3.1 mohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 7.2 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -350 V, 35 MHz, 230 W, -15 A, 10 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.69 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 14 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 55 A, 1.6 V, 230 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 64 A, 1.5 V, 230 W, 600 V, TO-247, 3 引脚
(EN)
INFINEON
场效应管, MOSFET, N沟道, 75V, 120A
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 173 A, 60 V, 0.00275 ohm, 10 V, 3.7 V
(EN)
ON SEMICONDUCTOR
双极性晶体管, NPN, 350V, TO-264
STMICROELECTRONICS
静电保护装置, TVS AEC-Q101, 43 V, SOT-23, 3 引脚, 230 W
(EN)
NEXPERIA
二极管, TVS, 2.4V, SOT-23, 整卷
(EN)
