VISHAY

晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V

VISHAY

MOSFET, N CHANNEL, 200V, 960mA, SOT-223-4

ROHM

双路场效应管, MOSFET, N和P沟道, 6 A, 45 V, 0.033 ohm, 10 V, 10 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0013 ohm, 4.5 V, 1.5 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V

VISHAY

场效应管, MOSFET, N沟道 与 P 通道, 60V, 0.046Ω

VISHAY

晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.5 ohm, -10 V, -2 V

TEXAS INSTRUMENTS

场效应管, N沟道, 大功率, NEXFET, 25V, 100A, SON-8

VISHAY

晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 5 V, 2 V

VISHAY

MOSFET, DUAL P CHANNEL, -20V, 0.0275OHM, -8A, SOIC-8

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 100V, 100A, VSON-8

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V

VISHAY

双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.083 ohm, -4.5 V, -1 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 25V, 97A

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 25V, 100A

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0013 ohm, 4.5 V, 1.5 V

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 25V, 100A, SON

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 9 A, 40 V, 0.019 ohm, 10 V, 1.7 V