规格：功耗 Pd 3.1W,
INFINEON
场效应管, MOSFET, N沟道, 90A, 30V, 3.1W
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 500 mohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 40 V, 6.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8.5 A, 30 V, 0.016 ohm, 10 V, 2.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8.5 A, 30 V, 0.016 ohm, 10 V, 2.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 9.2 A, 40 V, 0.0165 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 18 mohm, 10 V, 2.4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.083 ohm, -4.5 V, -1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 18 mohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 0.015 ohm, 4.5 V, 1.5 V
(EN)
