规格：功耗 Pd 260W,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.0229 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 53 A, 1.8 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 1.75 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 100 A, 2.5 V, 260 W, 600 V, ISOTOP, 4 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
(EN)FUJI ELECTRIC
单晶体管, IGBT, 48 A, 1.85 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
场效应管, MOSFET 晶体管
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 1.9 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 1.9 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)
NEXPERIA
静电保护装置, TVS, 18 V, SOD-523, 2 引脚, 260 W
(EN)NEXPERIA
静电保护装置, TVS, 15 V, SOD-523, 2 引脚, 260 W
(EN)
NXP
二极管, TVS, SOT-23
(EN)
NEXPERIA
二极管, TVS, SOD-523, 整卷
(EN)NEXPERIA
静电保护装置, TVS, 15 V, SOD-523, 2 引脚, 260 W
(EN)NEXPERIA
静电保护装置, TVS, 18 V, SOD-523, 2 引脚, 260 W
(EN)
