规格：功耗 Pd 3.3W,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2 A, 100 V, 0.23 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.07 ohm, 20 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.8 A, 400 V, 3 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.18 ohm, -10 V, -3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.031 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.1 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, N通道, MOSFET, 25V, 34A, 8-PWR56
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
(EN)
