规格：功耗 Pd 330mW,
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.5 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 340mA, SC-70, 整卷
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
(EN)DIODES INC.
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE
(EN)DIODES INC.
单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -90 mA, -45 V, 9 ohm, -10 V, -3.5 V
(EN)DIODES INC.
单晶体管 双极, 达林顿, NPN, 60 V, 330 mW, 300 mA, 10000 hFE
(EN)DIODES INC.
单晶体管 双极, 达林顿, NPN, 40 V, 330 mW, 300 mA, 20000 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 170 mA, 60 V, 3 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
双极晶体管阵列, NPN, PNP, 40 V, 330 mW, 1 A, 450 hFE, SuperSOT
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.75 A, -20 V, 0.065 ohm, -4.5 V, -1 V
(EN)
