规格：功耗 Pd 2.5W,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0049Ω, 15A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, P沟道, -9.8 A, -30 V, 13.6 mohm, -10 V, -1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.01OHM, 10A, SOIC-8
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, SOIC
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.022 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 150V, 4.1A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0132Ω, 9A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 30V, 0.0013OHM, 60A, POWER 56-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.029 ohm, 10 V, 20 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 4.5A, SOIC, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 0.03 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 28.5 mohm, -4.5 V, -400 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 60 V, 0.017 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0031 ohm, 10 V, 2.32 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.06 ohm, 10 V, 5.5 V
(EN)
