规格：功耗 Pd 2.5W,
VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 0.037 ohm, -10 V, -1.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.5 A, -60 V, 200 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -9.4 A, -60 V, 0.15 ohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 42 A, 30 V, 3200 μohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 9 A, -30 V, 17 mohm, -10 V, -1.7 V
(EN)DIODES INC.
单晶体管 双极, NPN, 75 V, 140 MHz, 2.5 W, 4.5 A, 450 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET, 整卷
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -20 V, 0.1 ohm, -2.7 V, -700 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.02 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 22 A, 40 V, 0.0025 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 16 A, 30 V, 0.005 ohm, 10 V, 1.3 V
(EN)
