规格：功耗 Pd 2.5W,
INFINEON
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0031 ohm, 10 V, 2.32 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 5 mohm, 4.5 V, 2.25 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 0.004 ohm, 10 V, 2.25 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 0.004 ohm, 10 V, 2.25 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 100 V, 18 mohm, 10 V, 4.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 100 V, 18 mohm, 10 V, 4.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 0.0047 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 25 V, 0.002 ohm, 10 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.5 mohm, 10 V, 2.35 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0039 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0039 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0039 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 0.0054 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 0.0054 ohm, -10 V, -1.8 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -15A, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.01 ohm, -10 V, -1.8 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -9.2A, SOIC
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -9.2A, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -30 V, 0.048 ohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 50 V, 100 MHz, 2.5 W, 1 A, 25000 hFE
(EN)
