规格：功耗 Pd 2.5W,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 150 mohm, -10 V, -1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.25 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.25 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 28.5 mohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV
(EN)
VISHAY
场效应管, MOSFET, N通道, 20V, 20A, SOIC, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 整卷
(EN)
INTERNATIONAL RECTIFIER
场效应管, N通道, MOSFET, 30V, 12.5A, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)VISHAY
晶体管, MOSFET, P沟道, 5.8 A, -30 V, 0.023 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 8 A, -30 V, 0.015 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.015 ohm, 10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.015 ohm, 10 V, -1 V
(EN)
INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2.5 V
(EN)VISHAY
场效应管, MOSFET, N通道, 60V, 8A, SOIC, 整卷
(EN)
