规格：功耗 Pd 2.5W,
VISHAY
场效应管, MOSFET, P沟道, -5.7A, -30V, 2.5W
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.7 mohm, 10 V, 5.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 0.0625 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -20A, SOIC
(EN)INFINEON
场效应管, MOSFET, P沟道, -12V, -16A, SOIC-8
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -20 V, 47 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 200 V, 140 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 7.7A, IPAK
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 0.0285 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 7.6A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 30 V, 7.8 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5.3A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)DIODES INC.
双路场效应管, MOSFET, 双P沟道, -6.9 A, -30 V, 0.045 ohm, -10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.05 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 830 mA, 250 V, 1.38 ohm, 10 V, 5 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -11.4A, -30V, 2.5W
(EN)
