规格：功耗 Pd 255W,
INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 18 mohm, 10 V, 4.5 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 引脚
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 39 A, 600 V, 0.055 ohm, 10 V, 3.2 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 600 V, 99 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.075 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-220, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 汽车, N沟道, 80 A, 75 V, 0.0048 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-220, 3 引脚
(EN)
