规格：功耗 Pd 25W,
NEXPERIA
单晶体管 双极, NPN, 100 V, 140 MHz, 25 W, 2 A, 10 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -100 V, 125 MHz, 25 W, -2 A, 20 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -100 V, 125 MHz, 25 W, -3 A, 10 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 45.5 A, 30 V, 0.0054 ohm, 10 V, 2.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 600 V, 2.7 ohm, 10 V, 4.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 600 V, 2.7 ohm, 10 V, 4.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.046 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 525 V, 1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 9 A, 2.5 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.6 ohm, 10 V, 3.75 V
(EN)
TEXAS INSTRUMENTS
芯片, 静电保护器, 4通道, SOT-23
(EN)
NEXPERIA
静电保护装置, 12 V, SOT-886, 6 引脚, 25 W
(EN)
