规格：功耗 Pd 48W,
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 500 V, 0.43 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0037 ohm, 4.5 V, 1.63 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.1 ohm, 5 V, 1.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.084 ohm, 10 V, 2.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 16 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 0.0027Ω, 93A, SOIC-8
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 24.5 mohm, 10 V, 4 V
(EN)
