规格：功耗 Pd 48W,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.15 ohm, 10 V, 2.8 V
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 12A, TO-252, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.002 ohm, 10 V, 2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 0.0058OHM, 40A, POWERPAK SO-8
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 24 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 40 V, 0.0079 ohm, 10 V, 3 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 93 A, 30 V, 0.0027 ohm, 10 V, 1.63 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 60 V, 0.01 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.019 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.002 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 20 V, 0.0035 ohm, 4.5 V, 950 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 20 V, 0.0035 ohm, 4.5 V, 950 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 200 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
(EN)
