规格：功耗 Pd 210mW,
INFINEON
晶体管 双极-射频, AEC-Q101, NPN, 9 V, 14 GHz, 210 mW, 35 mA, 120 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 双NPN, 45 V, 210 mW, 100 mA, 200 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -860 mA, -20 V, 120 mohm, -4.5 V, -1 V
(EN)INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 210 mW, 60 mA, 60 hFE
(EN)INFINEON
晶体管 双极-射频, NPN, 6 V, 14 GHz, 210 mW, 35 mA, 90 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 双NPN, 45 V, 210 mW, 100 mA, 200 hFE
(EN)
