规格：功耗 Pd 210W,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 650 V, 0.067 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 45.6 A, 150 V, 33 mohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 33 A, 2.05 V, 210 W, 1.2 kV, TO-247AC, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 55 V, 0.0056 ohm, 10 V, 1.6 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 15 A, 500 V, 330 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0059 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 130 A, 60 V, 0.006 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 35 A, 1.85 V, 210 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 55 A, 1.8 V, 210 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 55 A, 1.8 V, 210 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 55 A, 1.8 V, 210 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 40 A, 1.8 V, 210 W, 1.2 kV, Module
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 35 A, 1.85 V, 210 W, 1.2 kV, Module
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 60 V, 7 mohm, 10 V, 1.6 V
(EN)
