规格：功耗 Pd 45W,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 7 A, -60 V, 410 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.8 mohm, 10 V, 1 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, -34 A, -30 V, 0.0037 ohm, -10 V, -800 mV
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.0272 ohm, 10 V, 2 V
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 18 A, 150 V, 0.047 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.019 ohm, 10 V, 2 V
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 12 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 15 A, 80 V, 0.059 ohm, 1.7 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0085 ohm, 10 V, 1.64 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 12 A, 100 V, 0.08 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 24 A, 60 V, 0.009 ohm, 10 V, 1.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 55 A, 25 V, 0.00755 ohm, 10 V, 1.5 V
(EN)
