VISHAY

晶体管, MOSFET, N沟道, 1.3 A, 100 V, 270 mohm, 10 V, 4 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.045 ohm, 10 V, 2.6 V

NEXPERIA

单晶体管 双极, NPN, 100 V, 170 MHz, 1.3 W, 6 A, 140 hFE

VISHAY

单管二极管 齐纳, 16 V, 1.3 W, DO-204, 5 %, 2 引脚, 175 °C

VISHAY

齐纳二极管, Vz:30V

INFINEON

场效应管, MOSFET, N沟道, 30V, 3.4A, 3-SOT-23

VISHAY

齐纳二极管, Vz:3.3V

VISHAY

齐纳二极管, 1.3W, 51V, DO-41

NEXPERIA

单晶体管 双极, NPN, 40 V, 128 MHz, 1.3 W, 10 A, 230 hFE

VISHAY

晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 5 V, 2 V

MICROCHIP

晶体管, MOSFET, N沟道, 100 mA, 450 V, 60 ohm, 0 V

VISHAY

场效应管, MOSFET, P沟道

VISHAY

齐纳二极管, Vz: 10V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 160 V, 120 MHz, 1.3 W, 700 mA, 200 hFE

VISHAY

齐纳二极管, 1.3W, 75V, DO-41

VISHAY

单管二极管 齐纳, AEC-Q101, 9.1 V, 1.3 W, DO-41, 5 %, 2 引脚, 175 °C

MICROCHIP

晶体管, MOSFET, N沟道, 135 mA, 350 V, 35 ohm, 0 V

VISHAY

单管二极管 齐纳, 5.1 V, 1.3 W, DO-204AL, 2 引脚, 175 °C

NEXPERIA

单晶体管 双极, PNP, -40 V, 97 MHz, 1.3 W, -10 A, 40 hFE

VISHAY

晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 100V, 1.3A

NEXPERIA

单晶体管 双极, NPN, 60 V, 100 MHz, 1.3 W, 1 A, 100 hFE

VISHAY

单管二极管 齐纳, 12 V, 1.3 W, DO-41, 5 %, 2 引脚, 200 °C

VISHAY

场效应管, MOSFET, P沟道

VISHAY

晶体管, MOSFET, P沟道, 700 mA, -100 V, 1.2 ohm, -10 V, -4 V