规格：功耗 Pd 56W,
INTERNATIONAL RECTIFIER
场效应管, N通道, MOSFET, 55V, 29A TO-220AB
(EN)
INFINEON
晶体管, MOSFET, P沟道, 17 A, -55 V, 100 mohm, -10 V, -4 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 30A TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.005 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 5 mohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 40 A, 60 V, 16 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0054 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, IGBT, 600V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 100 V, 56.6 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 29 A, 60 V, 19.1 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 46 A, 40 V, 11 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 29 A, 60 V, 19.1 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 24 A, 80 V, 37 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 100 V, 56.6 mohm, 10 V, 3 V
(EN)
VISHAY
静电保护二极管, 5V
(EN)VISHAY
二极管, 静电保护, LLP1006, 整卷
(EN)
