规格：功耗 Pd 52W,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.00115 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0027 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0058 ohm, -10 V, -1.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.009 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -13.2 A, -100 V, 0.119 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.8 A, -200 V, 2.06 ohm, -10 V, -5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0195 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 100 V, 48 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 35 A, 12 V, 3.1 mohm, 4.5 V, 400 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.262 ohm, -10 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0103 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 1.1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -13.2A, POWERPAK 1212-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 105 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V
(EN)
