规格：功耗 Pd 52W,
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0072 ohm, -4.5 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 1.2 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -150V, -8.9A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.016 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 16A, D-PAK
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, D-PAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.0045 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 98 A, 40 V, 0.0025 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0035 ohm, -10 V, -400 mV
(EN)
INFINEON
单晶体管, IGBT, 19 A, 2.2 V, 52 W, 600 V, TO-220FP, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0076 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.7 A, -12 V, 90 mohm, -4.5 V, -500 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 75 V, 0.031 ohm, 10 V, 2.3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.0048 ohm, 10 V, 3 V
(EN)
