品牌：TEXAS INSTRUMENTS,规格：功耗 Pd 500mW,
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.8 A, -12 V, 0.097 ohm, -4.5 V, -650 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.054 ohm, 8 V, 900 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 500 mA, 20 V, 0.99 ohm, 8 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, FemtoFET™, P沟道, -1.7 A, -20 V, 0.11 ohm, -8 V, -950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.054 ohm, 10 V, 1.75 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.1 A, 12 V, 0.14 ohm, 4.5 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.1 A, 12 V, 0.14 ohm, 4.5 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)
