规格：功耗 Pd 60W,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 40 MHz, 60 W, 4 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, HFE 40
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -60 V, 280 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 60 W, -8 A, 750 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, 60 V, 40 MHz, 60 W, -8 A, 60 hFE
INFINEON
单晶体管, IGBT, 16 A, 1.66 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 200 V, 10 MHz, 60 W, 7 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 60 V, 60 mohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 5.5 A, 600 V, 750 mohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 16 A, 1.66 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V
(EN)
NTE ELECTRONICS
小信号双极性晶体管
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
