规格：功耗 Pd 800mW,
ON SEMICONDUCTOR
晶体管 双极-射频, NPN, 12 V, 7 GHz, 800 mW, 150 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V
(EN)
VISHAY
单管二极管 齐纳, 200 V, 800 mW, DO-219AB, 5 %, 2 引脚, 175 °C
(EN)VISHAY
单管二极管 齐纳, 8.2 V, 800 mW, DO-219AB, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.105 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR
达林顿晶体管, NPN, 80V, SOT-223
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 200 V, 800 mW, SMD, 2 引脚, 175 °C
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 65 V, 60 MHz, 800 mW, 1 A, 40 hFE
(EN)
VISHAY
齐纳二极管, 2.3W, 62V, DO-219AB
(EN)RENESAS
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.142 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.158 ohm, -10 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -30 V, 0.195 ohm, -4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 50 MHz, 800 mW, 700 mA, 120 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V V(BR)DSS
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.9 A, -30 V, 0.036 ohm, -10 V, -2.2 V
(EN)TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 36 V, 800 mW, SMD, 2 引脚, 175 °C
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
(EN)
