规格：功耗 Pd 830mW,
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V
(EN)
NEXPERIA
场效应管, MOSFET, N沟道, 30V, 1.9A, 3-SOT-23, 整卷
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.1 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)
VISHAY
Transistor Polarity:Dual N Channel
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 800 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 560mA SOT-23, 整卷
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 475 mA, 60 V, 0.78 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -250 V, 60 MHz, 830 mW, 100 mA, 50 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 500mA, TO-92
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.077 ohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)
