规格：功耗 Pd 830mW,
NEXPERIA
晶体管, MOSFET, N沟道, 173 mA, 50 V, 2.8 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.074 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.074 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3.6 A, 20 V, 0.056 ohm, 4.5 V, 650 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.1 ohm, 4.5 V, 600 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N+P沟道, 20V, TSOP
(EN)
VISHAY
DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.125 ohm, 4.5 V, 600 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.9 A, -12 V, 0.016 ohm, -4.5 V, -900 mV
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4.9 A, -12 V, 0.016 ohm, -4.5 V, -900 mV
(EN)
