规格：功耗 Pd 83W,
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -28 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET?, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0049 ohm, 10 V, 2.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 550 V, 0.36 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 1.2 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 100 V, 0.047 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -28 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.033 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0052 ohm, 10 V, 1.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
