
VISHAY
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV

DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -160 V, 50 MHz, 900 mW, -1 A, 160 hFE

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V

ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 420 MHz, 900 mW, -1 A, 200 hFE

ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 420 MHz, 900 mW, 1 A, 200 hFE

ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 50 V, 900 mW, 1 A, 200 hFE, SOT-25

ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 360 MHz, 900 mW, -3 A, 200 hFE

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 0.233 ohm, -10 V, -2.6 V

ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 380 MHz, 900 mW, 3 A, 200 hFE

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.165 ohm, -4 V, -1.3 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -120 V, 120 MHz, 900 mW, -800 mA, 120 hFE

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 160 V, 100 MHz, 900 mW, 1 A, 160 hFE

DIODES INC.
双路场效应管, MOSFET, N和P沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 160 V, 100 MHz, 900 mW, 1 A, 160 hFE

VISHAY
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.116 ohm, -4.5 V, 600 mV

ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, -30 V, 900 mW, -1.5 A, 200 hFE, SOT-25

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 0.0417 ohm, 4.5 V, 1.5 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -160 V, 50 MHz, 900 mW, -1 A, 160 hFE