规格：功耗 Pd 900mW,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -460 mA, -25 V, 0.87 ohm, -4.5 V, -860 mV
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 1.5 A, 20 V, 0.17 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 460 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, 30 V, 100 MHz, 900 mW, 3 A, 100 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 120 V, 120 MHz, 900 mW, 800 mA, 60 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)DIODES INC.
单晶体管 双极, NPN, 30 V, 240 MHz, 900 mW, 1.5 A, 270 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.7 A, 20 V, 80 mohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 50V, 510mA, SuperSOT, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, SuperSOT-6
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 900 mW, 500 mA, 250 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.105 ohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 25V, 680mA, SuperSOT, 整卷
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 900 mW, 500 mA, 160 hFE
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV
(EN)
