规格：功耗 Pd 900mW,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 2.7A, SuperSOT, 整卷
(EN)
DIODES INC.
单晶体管 双极, PNP, 12 V, 180 MHz, 900 mW, 1.5 A, 270 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 12 V, 180 MHz, 900 mW, 1.5 A, 270 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 30 V, 200 MHz, 900 mW, 1.5 A, 270 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 30 V, 200 MHz, 900 mW, 1.5 A, 270 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 12 V, 170 MHz, 900 mW, 1.5 A, 270 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 12 V, 170 MHz, 900 mW, 1.5 A, 270 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 30 V, 240 MHz, 900 mW, 1.5 A, 270 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 80 MHz, 900 mW, -500 mA, 250 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -45 V, 80 MHz, 900 mW, -500 mA, 250 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 900 mW, 500 mA, 160 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 900 mW, 500 mA, 250 hFE
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.04 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双P沟道, -25V, SUPERSOT-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -460 mA, -25 V, 0.87 ohm, -4.5 V, -860 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 460 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
(EN)
