规格：功耗 Pd -,
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
TEXAS INSTRUMENTS
芯片
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 5 A, 60 V, 0.03 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管阵列
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, TSSOP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0026 ohm, 10 V, 3.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)
