TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

SEMIKRON

晶体管, IGBT阵列&模块, 双NPN, 422 A, 1.85 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 400 A, 3.3 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 114 A, 1.85 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 616 A, 1.8 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 130 A, 2.1 V, 600 V, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 200 A, 3.3 V, 1.2 kV, Module

VISHAY

晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V

THAT CORPORATION

双极晶体管阵列, NPN, PNP, 40 V, 20 mA, 100 hFE, DIP

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 311 A, 1.75 V, 1.2 kV, Module

STMICROELECTRONICS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 115 A, 1.85 V, 1.2 kV, Module

STMICROELECTRONICS

晶体管, 射频FET, 900 V, 27 MHz, STAC177B

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 265 A, 1.45 V, 600 V, Module

STMICROELECTRONICS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC

SEMIKRON

晶体管, IGBT阵列&模块, 沟, N沟道, 830 A, 2 V, 1.7 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 950 A, 1.95 V, 1.7 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 四路NPN, 438 A, 1.45 V, 650 V, Module

SEMIKRON

单晶体管 双极, N沟道, 180 A, 200 V, 0.009 ohm, 10 V, 3 V

SEMIKRON

晶体管, IGBT阵列&模块, N沟道, 422 A, 1.85 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 422 A, 1.85 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, NPN, 232 A, 1.8 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 313 A, 1.8 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 80 A, 2 V, 1.7 kV, Module