规格：功耗 Pd 1.25W,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 80 mohm, 4.5 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -12 V, 32 mohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 98 mohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.8 A, 25 V, 20 mohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 60 V, 0.356 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.076 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.078 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.035 ohm, 4.5 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.098 ohm, -10 V, -2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.4 A, 20 V, 0.085 ohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -1.7 A, -20 V, 0.27 ohm, -4.5 V, -700 mV
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 25V, 5.8A, 3-SOT-23
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 4.5A, TO-236
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -20 V, 0.05 ohm, -4.5 V, -400 mV
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
