规格：功耗 Pd 1.9W,
VISHAY
场效应管, MOSFET, N沟道, 250V, 3.8A, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, 8.6 A, -60 V, 0.0115 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, -20V, -3A, WL-CSP
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, 20V, 3A, 8-WLCSP
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.03 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.03 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2 A, 30 V, 0.04 ohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3 A, -150 V, 0.073 ohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 8.6 A, -60 V, 0.0115 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 150V, 0.041Ω, 4A
(EN)VISHAY
晶体管, MOSFET, N沟道, 7.6 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N通道, 12V, 22A, SOIC
(EN)
