规格：集电极发射饱和电压, Vce 1.8V,
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 232 A, 1.8 V, 1.2 kV, Module
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 616 A, 1.8 V, 1.2 kV, Module
(EN)
POWEREX
晶体管, IGBT模块, 1.2KV, 150A
(EN)
POWEREX
晶体管, IGBT模块, 1.2KV, 300A
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 70 A, 1.8 V, 340 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 31 A, 1.8 V, 100 W, 600 V, TO-220AB, 3 引脚
(EN)
INFINEON
晶体管, IGBT, 600V, 31A
(EN)INFINEON
晶体管, IGBT, 600V, 13A
(EN)
INFINEON
晶体管, IGBT, 1.8V, 22A, TO-262-3
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 9 A, 1.8 V, 45 W, 1.2 kV, TO-268AA, 3 引脚
(EN)
IXYS SEMICONDUCTOR
Silicon Carbide IGBT Single Transistor, 75 A, 1.8 V, 300 W, 600 V, TO-247, 3 Pins
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 1.8 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 40 A, 1.8 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)
