规格：集电极发射电压, Vceo 1.2kV,
INFINEON
单晶体管, IGBT, 46 A, 3.1 V, 313 W, 1.2 kV, TO-247, 3 引脚
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 40 A, 2.1 V, 1.05 kW, 1.2 kV, SEMITOP 3
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 22 A, 3 V, 145 W, 1.2 kV, SEMITRANS 6
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双NPN, 422 A, 1.85 V, 1.2 kV, Module
(EN)INFINEON
单晶体管, IGBT, 16.5 A, 3.1 V, 125 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 46 A, 3.6 V, 313 W, 1.2 kV, TO-247AC, 3 引脚
(EN)
STMICROELECTRONICS
IGBT, 1.3V, 10A, TO-252-3
(EN)STMICROELECTRONICS
单晶体管, IGBT, 50 A, 1.85 V, 375 W, 1.2 kV, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)
VISHAY
单晶体管, IGBT, 84 A, 3.22 V, 431 W, 1.2 kV, SOT-227, 4 引脚
(EN)VISHAY
单晶体管, IGBT, 84 A, 3.22 V, 431 W, 1.2 kV, SOT-227, 4 引脚
(EN)VISHAY
单晶体管, IGBT, 258 A, 1.73 V, 893 W, 1.2 kV, SOT-227, 4 引脚
(EN)
