规格：集电极发射电压, Vceo 650V,
ROHM
单晶体管, IGBT, 场截止沟道, 55 A, 1.65 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.6 V, 144 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 144 W, 650 V, TO-247N, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 60 A, 1.7 V, 250 W, 650 V, TO-247AC, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 90 A, 1.7 V, 325 W, 650 V, TO-247AC, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.64 V, 595 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 16 A, 1.65 V, 94 W, 650 V, TO-263S, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 50 A, 1.6 V, 174 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 85 A, 1.65 V, 277 W, 650 V, TO-247N, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 30 A, 1.65 V, 133 W, 650 V, TO-263S, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2.2 V, 455 W, 650 V, TO-247, 3 引脚
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 8 A, 1.65 V, 62 W, 650 V, TO-252, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 140 A, 1.7 V, 455 W, 650 V, TO-247AC, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 60 A, 1.7 V, 250 W, 650 V, TO-247AC, 3 引脚
(EN)
INFINEON
晶体管, IGBT阵列&模块, EasyPACK 2B, N沟道, 100 A, 1.45 V, 300 W, 650 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, EasyPACK, N沟道, 150 A, 1.45 V, 335 W, 650 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, EasyPACK 2B, N沟道, 75 A, 1.45 V, 250 W, 650 V, Module
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 引脚
(EN)
