规格：集电极直流电流 30A,
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, NPN, 90 V, 2 MHz, 200 W, 30 A, 25 hFE
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2 V, 294 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 200 kHz, 150 W, 30 A, 5 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 450 V, 13 MHz, 250 W, 30 A, 4 hFE
(EN)STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)MULTICOMP
单晶体管 双极, NPN, 40 V, 2 MHz, 200 W, 30 A, 40 hFE
(EN)
NTE ELECTRONICS
晶体管, PNP, 60V, 30A, TO-3
(EN)
NTE ELECTRONICS
双极性晶体管
(EN)
INFINEON
晶体管, IGBT阵列&模块, 6x NPN, 30 A, 1.9 V, 73 W, 600 V, SIP
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.05 V, 217 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.05 V, 217 W, 1.2 kV, TO-247, 3 引脚
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 30 A, 1.65 V, 133 W, 650 V, TO-263S, 3 引脚
(EN)STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)
SOLID STATE
达林顿晶体管, NPN, 30A, TO-3
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2.1 V, 278 W, 1.2 kV, TO-247, 3 引脚
(EN)
IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, 双N沟道, 30 A, 1.9 V, 100 W, 600 V, i4-PAC
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 引脚
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 30 A, 2.7 V, 85 W, 600 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 30 A, 1.55 V, 165 W, 600 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 30 A, 1.55 V, 115 W, 600 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, 低功率, N沟道, 30 A, 1.55 V, 150 W, 600 V, Module
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.74 V, 160 W, 1.2 kV, TO-247AC, 3 引脚
(EN)
SEMELAB
单晶体管 双极, NPN, 230 V, 60 MHz, 400 W, 30 A, 50 hFE
(EN)
