规格：晶体管封装类型 SOT-323,
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 25V, 750mA, SOT-323
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 78 V, 2.53 ohm, 10 V, 1.76 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.085 ohm, 4 V, 850 mV
(EN)
DIODES INC.
单晶体管 双极, PNP, -45 V, 100 MHz, 200 mW, -500 mA, 250 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
(EN)DIODES INC.
单晶体管 双极, NPN, 40 V, 250 MHz, 200 mW, 600 mA, 100 hFE
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 75 mohm, -4.5 V, -600 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)DIODES INC.
单晶体管 双极, PNP, -65 V, 200 MHz, 200 mW, -100 mA, 290 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)DIODES INC.
单晶体管 双极, PNP, -45 V, 200 MHz, 200 mW, -100 mA, 290 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 12 V, 300 MHz, 300 mW, 500 mA, 270 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 100 MHz, 200 mW, 100 mA, 420 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 30 V, 270 MHz, 300 mW, 500 mA, 270 hFE
(EN)ROHM
单晶体管 双极, PNP, -12 V, 400 MHz, 200 mW, -1.5 A, 270 hFE
(EN)
ROHM
单晶体管 双极, NPN, 25 V, 300 MHz, 200 mW, 10 mA, 82 hFE
(EN)ROHM
单晶体管 双极, NPN, 6 V, 800 MHz, 200 mW, 10 mA, 270 hFE
(EN)ROHM
单晶体管 双极, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
(EN)ROHM
单晶体管 双极, PNP, -120 V, 140 MHz, 200 mW, -50 mA, 180 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 45 V, 100 MHz, 200 mW, 500 mA, 250 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 45 V, 300 MHz, 200 mW, 100 mA, 290 hFE
(EN)
