规格：晶体管封装类型 TO-220,
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 400V, 10A, TO-220
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.225 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 30 V, 8 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V
(EN)NTE ELECTRONICS
双极性晶体管, NPN, 400V, TO-220
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 550 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
达林顿双极晶体管
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, -80 V, 50 W, -10 A, 120 hFE
(EN)
NTE ELECTRONICS
达林顿双极性晶体管
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 3 ohm, 10 V, 5.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 450 V, 85 W, 5 A, 38 hFE
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 40 V, 0.0054 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V
(EN)NTE ELECTRONICS
双极性晶体管
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 80 W, 5 A, 10 hFE
(EN)NTE ELECTRONICS
晶体管套件
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.29 ohm, 8 V, 2.1 V
(EN)NTE ELECTRONICS
晶体管, NPN
(EN)
